Integrated circuit including super via and method of making

ABSTRACT

A method including depositing a first dielectric layer over a first conductive line. The method further includes forming a first opening in the first dielectric layer. The method further includes filling the first opening with a first conductive material to define a second conductive line. The method further includes depositing a second dielectric layer over the first dielectric layer. The method further includes forming a second opening in the second dielectric layer. The method further includes filling the second opening with a second conductive material to define a third conductive line. The method further includes forming a supervia opening in the first dielectric layer and the second dielectric layer. The method further includes filling the supervia opening with a third conductive material to define a supervia, wherein the supervia directly connects to the first conductive line and the third conductive line.

PRIORITY CLAIM

The present application is a divisional application of U.S. applicationSer. No. 16/530,770, filed Aug. 2, 2019, which claims the priority ofU.S. Provisional Application No. 62/753,516, filed Oct. 31, 2018, whichare incorporated herein by reference in their entireties.

RELATED APPLICATION

This application is related to U.S. patent application Ser. No.16/530,808, filed Aug. 2, 2019, which is incorporated herein byreference in its entirety.

BACKGROUND

Interconnect structures are used to convey signals and power betweendifferent elements within an integrated circuit (IC). Elements of the ICinclude passive elements, such as capacitor or resistors, as well asactive elements, such as transistors. Conductive lines are used toconvey signals in one or more directions parallel to a top surface of asubstrate. Conductive lines are arranged in layers above the substrate.Conductive vias are used to electrically connect conductive lines ondifferent layers. During operation of the IC, signals or power areconveyed along paths defined by the conductive lines and the conductivevias in order for the IC to perform a designed function.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a top view of an integrated circuit (IC) region according tosome embodiments.

FIG. 2 is a cross-sectional view of the IC region of FIG. 1 according tosome embodiments.

FIG. 3 is a perspective view of the IC region of FIG. 1 according tosome embodiments.

FIGS. 4A-4D are diagrams of a pitch of elements of an IC according tosome embodiments.

FIG. 5A is a top view of an IC region according to some embodiments.

FIG. 5B is a top view of an IC region according to some embodiments.

FIG. 6 is a cross-sectional view of an interconnect structure accordingto some embodiments.

FIG. 7A is a top view of an IC region according to some embodiments.

FIG. 7B is a cross-sectional view of the IC region of FIG. 7A accordingto some embodiments.

FIG. 8 is a flowchart of a method of making an IC region according tosome embodiments.

FIGS. 9A-9E are cross-sectional views of an IC region during variousstages of fabrication according to some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As a size of semiconductor devices continues to shrink, routing ofconductive lines and conductive vias for interconnect structures becomesmore complicated. Conductive lines and conductive vias are arranged inlayers, known as metal layers, over a substrate of the integratedcircuit (IC). While the layers are known as metal layers, the conductivelines and conductive vias are not necessarily formed of a metallicmaterial.

In some semiconductor devices, once the size of the semiconductor deviceis reduced to a certain point, the interconnect structure is limited toone-dimensional (1D) routing in order to permit reliable manufacturingof the IC. 1D routing means that the conductive lines extend only in asingle direction. For example, conductive lines in a first metal layerwill extend in an X-direction; and conductive lines in a second metallayer above the first metal layer will extend in a Y-directionperpendicular to the X-direction.

Conductive lines are arranged along routing tracks. Routing tracks arelocations in the interconnect structure that are available forconductive lines. In some instances, at least a portion of routingtracks do not include conductive lines. In some semiconductor devices apitch between adjacent routing tracks changes as a distance from thesubstrate increases. In 1D routing schemes, these differences in pitchresult in fewer available locations for conductive vias to provideelectrical connection between conductive lines on different metal layersof the interconnect structure.

Another concern for interconnect structures as the size of semiconductordevices decreases is electro-migration (EM). EM is the result of currentpassing through a conductive element causing atoms within the conductiveelement to move over time in the direction of current flow. Over time,EM has a risk of creating an open circuit; or increasing resistancewithin a conductive line to a point where the IC no longer functions asdesigned. EM is an even greater concern when a current is forced tochange direction. For example, when a signal travels along a conductivevia in a direction toward the substrate and then turns to travel along aconductive line parallel to the substrate, the effects of EM at theintersection of the conductive lines and the conductive via areincreased.

The use of supervias helps to improve routing for ICs because superviasreduce EM effects in the interconnect structure and are able to by-passmetal layers in the interconnect structure in order to reduce complexityin the interconnect structure. A supervia is a conductive via thatconnects a conductive line in a first metal layer to a conductive linein a third metal layer that is separated from the first metal layer byan intermediate second metal layer. The use of supervias reduces thenumber of turns a signal takes while moving through the interconnectstructure, which reduces EM effects. Supervias also reduce the number ofconductive lines that are formed in each metal layer because theintermediate conductive line between the first metal layer and thirdmetal layer is omitted. As a result, complexity of the interconnectstructure is decreased. Decreasing the complexity of the interconnectstructure helps to increase production yield and reduce manufacturingcost.

FIG. 1 is a top view of an IC region 100 according to some embodiments.FIG. 2 is a cross-sectional view of IC region 100 taken along lines A-A′according to some embodiments. FIG. 3 is a perspective view of IC region100 according to some embodiments. The following description of ICregion 100 is made with reference to FIGS. 1, 2 and 3 . For the sake ofclarity in the drawings, not every element is labeled in each of theFIGS. 1, 2 and 3 .

IC region 100 includes a substrate 110 including active elements. Insome embodiments, IC region also includes passive elements. IC region100 includes Fin field effect transistors (FinFETs), which include botha source/drain (S/D) contact structure 120 and a gate structure 130. Insome embodiments, IC region 100 includes a different type of transistor.

An interconnect structure is electrically connected to contact structure120 and gate structure 130. The interconnect structure includes metallayer zero (M0) vias 140 a. One M0 via 140 a is electrically connectedto a contact structure 120; and one M0 via 140 a is electricallyconnected to a gate structure 130. M0 conductive lines 145 a areelectrically connected to M0 vias 140 a. M0 conductive lines 145 aextend in a first direction parallel to a top surface of substrate 110.As noted above, the term metal layer is not intended to limit vias andconductive lines in the interconnect structure to metal structures.

Metal layer one (M1) vias 140 b are electrically connected to M0conductive lines 145 a. M1 conductive lines 145 b are electricallyconnected to M1 vias 140 b. M1 conductive lines 145 b extend in a seconddirection parallel to the top surface of substrate 110. M1 conductivelines 145 b extend perpendicular to M0 conductive lines 145 a. In someembodiments, M1 conductive lines 145 b are at an angle other than90-degrees with respect to M0 conductive lines 145 a.

Metal layer two (M2) vias 140 c are electrically connected to M1conductive lines 145 b. M2 conductive lines 145 c are electricallyconnected to M2 vias 140 c. M2 conductive lines 145 c extend in thefirst direction parallel to M0 conductive lines 145 a. In someembodiments, M2 conductive lines 145 c are at an angle with respect toM0 conductive lines 145 a.

Metal layer three (M3) vias 140 d are electrically connected to M2conductive lines 145 c. M3 conductive lines 145 d are electricallyconnected to M3 vias 140 d. M3 conductive lines 145 d extend in thesecond direction parallel to M1 conductive lines 145 b. In someembodiments, M3 conductive lines 145 d are at an angle with respect toM1 conductive lines 145 b.

Metal layer four (M4) via 140 e are electrically connected to M3conductive lines 145 d. M4 conductive line 145 e is electricallyconnected to M4 via 140 e. M4 conductive line 145 e extends in the firstdirection parallel to M0 conductive lines 145 a. In some embodiments, M4conductive line 145 e is at an angle with respect to M0 conductive lines145 a.

Supervia 150 a electrically connects an M1 conductive line 145 b to anM3 conductive line 145 d. In contrast with M2 via 140 c, supervia 150 aelectrically connects conductive lines spaced apart by multiple metallayers. That is, the M2 conductive lines 145 c are bypassed by supervia150 a. By by-passing M2 conductive lines 145 c, supervia 150 a helps toreduce complexity of the interconnect structure. In addition, a lengthof M2 conductive lines 145 c are able to be increased in IC region 100in comparison with structures that do not include supervias because alength of supervia 150 a in the first direction on M2 is less than alength of a corresponding M2 conductive line 145 c.

Supervia 150 b electrically connects an M2 conductive line 145 c to M4conductive line 145 e. In contrast with M3 via 140 d, supervia 150 belectrically connects conductive lines spaced apart by multiple metallayers. That is, the M3 conductive lines 145 d are bypassed by supervia150 b. By by-passing M3 conductive lines 145 d, supervia 150 b helps toreduce complexity of the interconnect structure. In addition, a lengthof M3 conductive lines 145 d are able to be increased in IC region 100in comparison with structures that do not include supervias because alength of supervia 150 b in the second direction on M3 is less than alength of a corresponding M3 conductive line 145 d.

IC region 100 includes supervia 150 a extending between M1 conductiveline 145 b and M3 conductive line 145 d. In some embodiments, supervia150 a is usable to connect conductive lines in any two spaced apartmetal layers. In some embodiments, a supervia is used to electricallyconnect contact structure 120 or gate structure 130 to an M1 conductiveline 145 b.

One of ordinary skill in the art would understand that the interconnectstructure also includes a dielectric material surrounding the variousconductive lines and vias. The dielectric material is not shown in FIGS.1-3 for the sake of simplicity in the drawings.

Conductive elements in each metal layer are surrounded by a dielectricmaterial. In some embodiments, a dielectric layer below the M0 level iscalled an inter-layer dielectric (ILD). In some embodiments, an etchstop layer, such as a contact etch stop layer (CESL), is deposited overcontact structure 120 and gate structure 130 prior to depositing theILD. The etch stop layer includes silicon oxide, silicon nitride,silicon oxynitride, silicon carbide, silicon oxycarbide, or anothersuitable material. In some embodiments, the formation of the etch stoplayer includes a deposition process and then an etch back process. Theetch stop layer is deposited by CVD, high density plasma CVD (HDP-CVD),spin-on coating, physical vapor deposition (PVD), atomic layerdeposition (ALD), and/or other suitable method. Afterward, for example,the ILD is deposited by CVD, PVD, high density plasma (HDP),spin-on-dielectric (SOD) process, other suitable processes, and/orcombination thereof. In some embodiments, the deposition process isfollowed by a planarization process, such as a chemical mechanicalpolishing (CMP) process, an etch process, or another suitable process.

In some embodiments, the ILD includes an insulating material such assilicon oxide, silicon nitride, undoped silicate glass (USG),Boro-Silicate Glass (BSG), a low-k dielectric material, TEOS, othersuitable materials, and/or combination thereof. In some embodiments, theILD is planarized to be coplanar with a top surface of contact structure120 and gate structure 130. For example, the ILD is planarized by usinga chemical mechanical planarization (CMP) to remove portions of the ILDover contact structure 120 and gate structure 130. In some embodiments,the CMP is applied to remove the etch stop layer above contact structure120 and gate structure 130. In various embodiments, other planarizationtechniques are used, such as an etch process.

In some embodiments, a dielectric layer at the M0 level or above iscalled an inter-metal dielectric (IMD) layer. In some embodiments, asecond etch stop layer is deposited over the ILD and an interface layeris deposited over the second etch stop layer. In some embodiments, thesecond etch stop layer is deposited over the IMD layer at each metallevel. The second etch stop layer includes silicon nitride, siliconoxynitride, silicon carbide, silicon oxycarbide, or other suitablematerials. The formation of the second etch stop layer includes adeposition process by CVD, sputtering, or other suitable process. TheIMD layer includes a low-k dielectric material, which usually has adielectric constant lower than 3, or extreme low-k (ELK) dielectricmaterial, which usually has a dielectric constant lower than 2.6. Insome embodiments, a hard mask layer or a contact feature is formedbetween the dielectric structure and the second etch stop layer. The IMDlayer is formed over the interface layer. In some embodiments, the IMDlayer is made of a same dielectric material or a different dielectricmaterial from the ILD. The second etch stop layer has a different etchselectivity from the IMD layer.

In some embodiments, conductive elements in the various metal levels areformed in an iterative manner until the completion of the interconnectstructure. Each conductive via 140 a-140 e, each conductive line 145a-145 e and each supervia 150 a-150 b includes at least one of copper,copper alloy, tungsten, aluminum, gold, or another suitable material. Insome embodiments, at least one conductive via 140 a-140 e has adifferent composition from at least one other conductive via, conductiveline 145 a-145 e or supervia 150 a-150 b. In some embodiments, at leastone conductive line 145 a-145 e has a different composition from atleast one other conductive line, conductive via 140 a-140 e or supervia150 a-150 b. In some embodiments, at least one supervia 150 a-150 b hasa different composition from at least one other supervia, conductiveline 145 a-145 e or conductive via 140 a-140 e.

FIG. 4A is a diagram of a pitch of elements of an IC according to someembodiments. FIG. 4A includes conductive lines 445 a on a first metallevel and conductive lines 445 b on a third metal level. Supervias 450are used to electrically connect corresponding conductive lines 445 a onthe first metal level and conductive lines 445 b on the third metallevel. The first metal level is separated from the third metal level byan intervening second metal level that is not shown in FIG. 4A for thesake of simplicity. FIG. 4A also includes gate structures 430.

Routing tracks for conductive lines 445 a are separated by a first metallevel pitch P_(M1). Routing tracks for conductive lines 445 b areseparated by a third metal level pitch P_(M3). FIG. 4A includes everyrouting track is occupied in the first metal level and in the thirdmetal level. In some embodiments, at least one routing track in thefirst metal level or the third metal level is unoccupied by acorresponding conductive line. A magnitude of the P_(M1) and P_(M3) aredetermined in part by process capability controls. That is, for smallernode size technologies, P_(M1) and P_(M3) are smaller in comparison withlarger node size technologies. In FIG. 4A, a ratio of P_(M1) to P_(M3)is 1:1. This means that every routing track in the first metal level isaligned with every routing track in the third metal level. A 1:1 ratioof P_(M1) to P_(M3) provides 100% access for supervias 450 to connect aconductive line 445 a to a corresponding conductive line 445 b. As theamount of access increases, more supervias 450 are able to be used inthe interconnect structure which reduces complexity of the interconnectstructure.

Gate structures 430 are separated by a gate pitch P_(Gate). In FIG. 4A,a ratio between PGate and P_(M1) is 1:2. This means that every otherrouting track in the first metal level is aligned with a gate structure120. This provides 50% access for supervias (not shown) to electricallyconnect a gate structure 120 to a corresponding conductive line 445 a inthe first metal level.

FIG. 4B is a diagram of a pitch of elements of an IC according to someembodiments. In comparison with FIG. 4A, FIG. 4B includes a third metallevel pitch P′_(M3). A ratio of P_(M1) to P′_(M3) is 2:3. This meansthat every third routing track in the first metal level is aligned withevery second routing track in the third metal level. A 2:3 ratio ofP_(M1) to P′_(M3) provides 50% access for supervias 450 to connect aconductive line 445 a to a corresponding conductive line 445 b. Thepitch ratio in FIG. 4B provides fewer access points for supervias 450 incomparison with FIG. 4A.

FIG. 4B includes a width of conductive lines 445 b being greater than awidth of conductive lines 445 a. In contract, a width of conductivelines 445 b is the same as a width of conductive lines 445 a in FIG. 4A.In some embodiments, a size of conductive lines increases a distancebetween the metal level and the substrate increases. This providesreduced resistance in the conductive lines and via in the higher metallevels. However, the larger conductive lines and via occupy more spacewhich results is greater separation between routing tracks in the highermetal levels.

FIG. 4C is a diagram of a pitch of elements of an IC according to someembodiments. In comparison with FIG. 4A, FIG. 4C includes a gate pitchP′_(Gate). A ratio of P_(M1) to P′_(Gate) is 2:3. This means that everythird routing track in the first metal level is aligned with everysecond gate structure. A 2:3 ratio of P_(M1) to P′_(Gate) provides 33%access for supervias to connect a conductive line 445 a to acorresponding gate structure 430. The pitch ratio in FIG. 4C providesfewer access points for supervias in comparison with FIG. 4A.

FIG. 4D is a diagram of a pitch of elements of an IC according to someembodiments. In comparison with FIG. 4A, FIG. 4D includes a third metallevel pitch P′_(M3). A ratio of P_(M1) to P′_(M3) is 2:3. This meansthat every third routing track in the first metal level is aligned withevery second routing track in the third metal level. A 2:3 ratio ofP_(M1) to P′_(M3) provides 50% access for supervias 450 to connect aconductive line 445 a to a corresponding conductive line 445 b. Thepitch ratio in FIG. 4D provides fewer access points for supervias 450 incomparison with FIG. 4A. In comparison with FIG. 4A, FIG. 4D alsoincludes a gate pitch P′_(Gate). A ratio of P_(M1) to P′_(Gate) is 2:3.This means that every third routing track in the first metal level isaligned with every second gate structure. A 2:3 ratio of P_(M1) toP′_(Gate) provides 33% access for supervias to connect a conductive line445 a to a corresponding gate structure 430. The pitch ratio in FIG. 4Dprovides fewer access points for supervias in comparison with FIG. 4A.

FIG. 5A is a top view of an IC region 500 according to some embodiments.IC region 500 includes conductive lines 545 a on the first metal leveland conductive lines 545 b on the second metal level. Gate structures530 are also included in IC region 500. Supervias 550 a-550 belectrically connect a conductive line 545 a on the first metal level toa conductive line 545 b on the third metal level. IC region 500 includeseach conductive line 545 a aligned with a corresponding conductive line545 b. Similar to the arrangement in FIG. 4A, IC region 500 provides ahigh number of access points for supervias because a ratio of P_(M1) toP_(M3) is 1:1. In contrast to FIG. 4A, some conductive lines 545 b donot overlap with conductive lines 545 a along a same routing track.While the pitch ratio is a factor is determining the availability ofaccess points for utilizing a supervia, the connections betweendifferent components in IC region 500 remove some of the access pointsbecause of a lack of overlapping portions of conductive lines in thedifferent metal levels.

FIG. 5B is a top view of an IC region 500′ according to someembodiments. IC region 500′ includes conductive lines 545 a on the firstmetal level and conductive lines 545 b on the second metal level. Gatestructures 530 are also included in IC region 500. Supervias 550 a-550 belectrically connect a conductive line 545 a on the first metal level toa conductive line 545 b on the third metal level. Similar to thearrangement in FIG. 4B, IC region 500′ provides a reduced number ofaccess points for supervias because a ratio of P_(M1) to P′_(M3) is 2:3.In contrast to FIG. 4B, some conductive lines 545 b do not overlap withconductive lines 545 a along a same routing track. Thus, access pointsin IC region 500′ are reduced due to a lack of overlapping portions ofconductive lines in the different metal levels in comparison with FIG.4B.

FIG. 6 is a cross-sectional view of an interconnect structure 600according to some embodiments. Interconnect structure 600 includesconductive vias 640 a on a first metal level. Each conductive via 640 ais connected to a corresponding conductive line 645 a. In a first path,a conductive via 640 b electrically connects a conductive line 645 a andconductive line 645 b; and a conductive via 640 c electrically connectsconductive line 645 b with a conductive line 645 c. In a second path, asupervia 650 directly connects a conductive line 645 a to a conductiveline 645 c. Conductive lines 645 a-645 c are similar to conductive lines145 a-145 e (FIG. 2 ). Conductive vias 640 a-640 c are similar toconductive vias 140 a-140 e (FIG. 2 ). Supervia 650 is similar tosupervia 150 a or 150 b (FIG. 2 ).

Conductive vias 640 a have a thickness Tvia1; and conductive lines 645 ahave a thickness TM1. Conductive via 640 b has a thickness Tvia2; andconductive line 645 b has a thickness TM2. Conductive via 640 c has athickness Tvia3; and conductive lines 645 c have a thickness of TM3. Insome embodiments, at least one of TM1, TM2 or TM3 is different fromanother of TM1, TM2 or TM3. In some embodiments, all of TM1, TM2 and TM3have a same magnitude. In some embodiments, at least one of Tvia1, Tvia2or Tvia3 is different from another of Tvia1, Tvia2 or Tvia3. In someembodiments, all of Tvia1, Tvia2 and Tvia3 have a same magnitude.

Supervia 650 includes a first section 650 a contacting conductive line645 a; and a second section 650 b contacting conductive line 645 c. Atotal thickness of supervia 650 is TsviaT. The total thickness ofsupervia TsviaT is equal to a sum of Tvia2, TM2 and Tvia3.

An angle between a top surface of conductive line 645 a and a sidewallof first section 650 a is θ1. A thickness Tsvia1 of first section 650 ais equal to a sum of Tvia2 and TM2.

A thickness Tsvia2 of second section 650 b is equal to Tvia3. Tsvia2 isless than Tsvia1. An angle between a line parallel to the top surface ofconductive line 645 a and a sidewall of second section 650 b is θ2. Insome embodiments, θ1 is equal to θ2. In some embodiments, θ1 is greaterthan θ2. When θ1 is equal to θ2 the sidewall of supervia 650 has auniform tapered shape. When θ1 is different from θ2 the sidewall ofsupervia 650 varies at point level with a top surface of conductive line645 b. In some embodiments, a uniform tapered shape indicates thatsupervia 650 is formed using a single etching and filling process. Insome embodiments, a varied tapered shape indicates that supervia 650 isformed as two separate etching and filling processes.

Supervia 650 is spaced from conductive line 645 b by a spacing distanceSsvia. The spacing distance Ssvia is determined based on parasiticcapacitance and resistance tolerance of the IC containing interconnectstructure 600 as well as manufacturing processes used to makeinterconnect structure 600. The spacing distance Ssvia is less than aspacing between conductive line 645 b and another conductive line (notshown) on the same metal level as conductive line 645 b. The reducedspacing distance Ssvia permitted by the use of supervia 650 helps toreduce the overall size of interconnect structure 600 and thecorresponding IC.

FIG. 7A is a top view of an IC region 700 according to some embodiments.IC region 700 includes a conductive line 745 and a supervia 750electrically connected to the conductive line 745. IC region 700 furtherincludes power ground (PG) rails 760. PG rails 760 carry operatingvoltage VDD or reference voltage VSS to devices within IC region 700.Supervia 750 electrically connects a PG rail 760 to a conductive line745.

FIG. 7B is a cross-sectional view of the IC region 700 along line C-C′according to some embodiments. Conductive line 745 is electricallyconnected to a cell region 715 by conductive via 740. Conductive line745 is similar to conductive lines 145 a-145 e (FIG. 2 ). Conductive via740 is similar to conductive vias 140 a-140 e (FIG. 2 ). Supervia 750 issimilar to supervia 150 a or 150 b. Cell region 715 includes active orpassive devices of IC region 700.

In some approaches that do not include a supervia, PG rails are arrangedin pairs. Arranging PG rails in pairs helps to reduce EM effects withinthe path between the PG rail and the cell region by reducing the currentfrom each PG rail to the cell region. However, when the PG rails arearranged in pairs, the signal from the pair of PG rails is eventuallyconsolidated in order to reach the cell region. For example, each of thePG rails in the pair is connected to a conductive line along separatepaths, but then a single via connects the conductive line to the cellregion. At the point where the PG rails are connected (throughconductive lines and vias) to the conductive line at which the signalsare consolidated, the current must change direction to be parallel to atop surface of the cell region. This change in direction increases EMeffects at the corners of the conductive line. As a result, theconductive line has an increased risk of failure rendering the ICinoperable.

In contrast with approaches that include PG rails in pairs, IC region700 provides a more direct path for current to go from PG rail 760 tocell region. This more direct path reduces EM effects because thedirection of the current does not significantly change. As a result, ahigher current is able to be used and a single PG rail is able toreplace the pair of PG rails from other approaches. As a result, fewerrouting tracks within the interconnect structure are occupied by PGrails. This increases the flexibility of routing designs for conductivelines and conductive vias in the interconnect structure. Using fewer PGrails also avoid additional design constraints for separatingneighboring PG rails. As a result, cells within an IC are able to belocated closer together, which reduces the overall size of the IC.

FIG. 8 is a flowchart of a method 800 of making an IC region accordingto some embodiments. In operation 805 a first dielectric layer isdeposited over a conductive element. In some embodiments, the firstdielectric layer is an ILD. In some embodiments, the first dielectriclayer is an IMD layer. In some embodiments, an etch stop layer isdeposited prior to depositing the first dielectric layer. In someembodiments, the first dielectric layer includes a low-k dielectricmaterial, which usually has a dielectric constant lower than 3, orextreme low-k (ELK) dielectric material, which usually has a dielectricconstant lower than 2.6. In some embodiments, the first dielectric layeris deposited by CVD, PVD, HDP, SOD process, other suitable processes,and/or a combination thereof. In some embodiments, the depositionprocess is followed by a planarization process, such as a chemicalmechanical polishing (CMP) process, an etch process, or another suitableprocess.

In operation 810 an opening is formed in the first dielectric layer forsingle metal level conductive elements. A single metal level conductiveelement is a conductive element that is entirely located within a singlemetal level of an interconnect structure. In some embodiments, theopening is formed using a patterned photoresist. In some embodiments,the opening is formed using a hard mask layer. Once the patternedphotoresist or hard mask layer is formed the opening is formed using anetching process. In some embodiments, the opening is formed by a plasmaassisted process, such as a reactive ion etching (RIE) process. In someembodiments, the etching process includes a wet etching process. In someembodiments, the etching process includes a dry etching process.

In optional operation 815 an opening is formed in the first dielectriclayer for a first section of a supervia. In some embodiments, theopening is formed using a patterned photoresist. In some embodiments,the opening is formed using a hard mask layer. Once the patternedphotoresist or hard mask layer is formed the opening is formed using anetching process. In some embodiments, the opening is formed by a plasmaassisted process, such as a reactive ion etching (RIE) process. In someembodiments, the etching process includes a wet etching process. In someembodiments, the etching process includes a dry etching process. In someembodiments, operations 810 and 815 are performed simultaneously. Insome embodiments, operation 810 is performed prior to operation 815. Insome embodiments, operation 815 is performed prior to operation 810. Insome embodiments, operation 815 is omitted and the opening for thesupervia is formed at a different operation.

FIG. 9A is a cross-sectional view of an IC region following operation815 according to some embodiments. Reference numbers in FIGS. 9A-9E thatmatch reference numbers in FIG. 2 refer to the same elements. Portionsof the IC region in FIG. 9A are omitted in comparison with FIG. 2 forthe sake of simplicity. In FIG. 9A, a first dielectric layer 970 a isover conductive lines 145 b. Openings 940 a are for single metal layerconductive elements. Openings 940 a expose a portion of a correspondingconductive line 145 b. Opening 950 a is for a first section of asupervia. Opening 950 a exposes a portion of a conductive line 145 b.

Returning to FIG. 8 , in operation 820 the openings in the firstdielectric layer are filled with a conductive material. In someembodiments, the conductive material includes copper, tungsten, cobalt,ruthenium, or another suitable conductive material. In some embodiments,the openings are filled using a plating process, PVD, sputter or anothersuitable process. In some embodiments, openings for single metal levelconductive elements are filled separately from an opening for a sectionof a supervia. In some embodiments, all openings in the first dielectriclayer are filled simultaneously. In some embodiments, the fillingprocess is followed by a planarization process, such as a CMP process,an etch process, or another suitable process.

In operation 825 a second dielectric layer is deposited over the firstdielectric layer. In some embodiments, an etch stop layer is depositedprior to depositing the second dielectric layer. In some embodiments,the second dielectric layer includes a low-k dielectric material, whichusually has a dielectric constant lower than 3, or extreme low-k (ELK)dielectric material, which usually has a dielectric constant lower than2.6. In some embodiments, a material of the second dielectric layer isdifferent from a material of the first dielectric layer. In someembodiments, the material of the second dielectric layer is a samematerial as the first dielectric layer. In some embodiments, the firstdielectric layer is deposited by CVD, PVD, HDP, SOD process, othersuitable processes, and/or a combination thereof. In some embodiments, adeposition process of the second dielectric layer is different from adeposition process of the first dielectric layer. In some embodiments,the deposition process of the second dielectric layer is a samedeposition process as the first dielectric layer. In some embodiments,the deposition process is followed by a planarization process, such as aCMP process, an etch process, or another suitable process.

FIG. 9B is a cross-sectional view of an IC region following operation825 according to some embodiments. In FIG. 9B, openings 940 a have beenfilled to form conductive vias 140 c and conductive lines 145 c. Opening950 a has been filled to form a first section 990 of a supervia. Asecond dielectric layer 970 b is over first dielectric layer 970 a.

Returning to FIG. 8 , in operation 830 an opening is formed in thesecond dielectric layer for single metal level conductive elements. Insome embodiments, the opening is formed using a patterned photoresist.In some embodiments, the opening is formed using a hard mask layer. Oncethe patterned photoresist or hard mask layer is formed the opening isformed using an etching process. In some embodiments, the opening isformed by a plasma assisted process, such as a reactive ion etching(RIE) process. In some embodiments, the etching process includes a wetetching process. In some embodiments, the etching process includes a dryetching process. In some embodiments, the etching process in operation830 is a same etching process as operation 810. In some embodiments, theetching process 830 is a different etching process from that inoperation 810.

In optional operation 835 an opening is formed in the second dielectriclayer for a second section of a supervia. Operation 835 is performedwhen operation 815 is performed. In some embodiments, the opening isformed using a patterned photoresist. In some embodiments, the openingis formed using a hard mask layer. Once the patterned photoresist orhard mask layer is formed the opening is formed using an etchingprocess. In some embodiments, the opening is formed by a plasma assistedprocess, such as a reactive ion etching (RIE) process. In someembodiments, the etching process includes a wet etching process. In someembodiments, the etching process includes a dry etching process. In someembodiments, operations 830 and 835 are performed simultaneously. Insome embodiments, operation 830 is performed prior to operation 835. Insome embodiments, operation 835 is performed prior to operation 830. Insome embodiments, operation 835 is omitted and the opening for thesupervia is formed at a different operation. In some embodiments, theetching process in operation 835 is a same etching process as operation815. In some embodiments, the etching process 835 is a different etchingprocess from that in operation 815.

FIG. 9C is a cross-sectional view of an IC region following operation835 according to some embodiments. Openings 940 b are for single metallayer conductive elements. One opening 940 b exposes a portion of aconductive line 145 c. Another opening 940 b does not expose a portionof a conductive line 145 c. Opening 950 b is for a second section of asupervia. Opening 950 b exposes a portion of a first section 990.

Returning to FIG. 8 , in optional operation 840 an opening is formed inthe second dielectric layer and in the first dielectric layer for asupervia. Operation 840 is performed when optional operations 815 and835 are not performed. In some embodiments, the opening is formed usinga patterned photoresist. In some embodiments, the opening is formedusing a hard mask layer. Once the patterned photoresist or hard masklayer is formed the opening is formed using an etching process. In someembodiments, the opening is formed by a plasma assisted process, such asa reactive ion etching (RIE) process. In some embodiments, the etchingprocess includes a wet etching process. In some embodiments, the etchingprocess includes a dry etching process. In contrast with operations 815and 835, operation 840 formed an opening that extends through multipledielectric layers in a same operation. In some embodiments, operation830 and at least a portion of operation 840 are performedsimultaneously. In some embodiments, operation 830 is performed prior tooperation 840. In some embodiments, operation 840 is performed prior tooperation 830. In some embodiments, operation 840 is omitted. In someembodiments, the etching process in operation 840 is a same etchingprocess as operation 810 or 830. In some embodiments, the etchingprocess 840 is a different etching process from that in operation 810and 830.

FIG. 9D is a cross-sectional view of an IC region following operation840 according to some embodiments. In contrast with FIG. 9C, opening950′ extends through both first dielectric layer 970 and seconddielectric layer 970 b. There is no first section 990 in opening 950′.Opening 950′ exposes a conductive line 145 a.

Returning to FIG. 8 , in operation 845 the openings in the seconddielectric layer are filled with a conductive material. In someembodiments, the conductive material includes copper, tungsten, cobalt,ruthenium, or another suitable conductive material. In some embodiments,the openings are filled using a plating process, PVD, sputter or anothersuitable process. In some embodiments, the conductive material inoperation 845 is a same conductive material as in operation 820. In someembodiments, a conductive material in operation 845 is different from aconductive material in operation 820. In some embodiments, openings forsingle metal level conductive elements are filled separately from anopening for a section of a supervia. In some embodiments, all openingsin the first dielectric layer are filled simultaneously. In someembodiments, the filling process in operation 845 is a same as filingprocess as in operation 820. In some embodiments, a filling process inoperation 845 is different from a filling process in operation 820. Insome embodiments, the filling process is followed by a planarizationprocess, such as a CMP process, an etch process, or another suitableprocess.

FIG. 9E is a cross-sectional view of an IC region following operation845 according to some embodiments. In FIG. 9E, openings 940 b have beenfilled to form conductive vias 140 d and conductive lines 145 d. Opening950 b or 950′ has been filled to form a supervia 150 a.

One of ordinary skill in the art would understand that the process ofmethod 800 is repeated numerous times in order to form an interconnectstructure for an IC. In some embodiments, one iteration of method 800utilizes operations 815 and 835 while a different iteration of method800 for a same IC utilizes operation 840. In some embodiments, everyiteration of method 800 utilizes operations 815 and 835. In someembodiments, every iteration of method 800 utilizes operation 840.

In some embodiments, operations of method 800 are performedsimultaneously. For example, in some embodiments, operations 810 and 815are performed simultaneously. In some embodiments, an order ofoperations of method 800 is changed. For example, in some embodimentsoperation 820 is performed prior to operation 815. In some embodiments,additional operations are added to method 800. For example, in someembodiments, an etch stop layer is deposited; or multiple fillingprocesses are utilized.

An aspect of this description relates to a method including depositing afirst dielectric layer over a first conductive line. The method furtherincludes forming a first opening in the first dielectric layer. Themethod further includes filling the first opening with a firstconductive material to define a second conductive line. The methodfurther includes depositing a second dielectric layer over the firstdielectric layer. The method further includes forming a second openingin the second dielectric layer. The method further includes filling thesecond opening with a second conductive material to define a thirdconductive line. The method further includes forming a supervia openingin the first dielectric layer and the second dielectric layer. Themethod further includes filling the supervia opening with a thirdconductive material to define a supervia, wherein the supervia directlyconnects to the first conductive line and the third conductive line. Insome embodiments, forming the supervia opening includes forming aportion of the supervia opening simultaneously with forming the firstopening. In some embodiments, forming the supervia opening includesforming a portion of the supervia opening simultaneously with formingthe second opening. In some embodiments, filling the supervia openingincludes filling a portion of the supervia opening simultaneously withfilling the first opening. In some embodiments, filling the superviaopening includes filling a portion of the supervia openingsimultaneously with filling the second opening.

An aspect of this description relates to a method. The method includesdepositing a first dielectric layer over a first conductive line. Themethod further includes forming a first opening in the first dielectriclayer. The method further includes filling the first opening with afirst conductive material to define a second conductive line. The methodfurther includes depositing a second dielectric layer over the firstdielectric layer. The method further includes forming a second openingin the second dielectric layer. The method further includes filling thesecond opening with a second conductive material to define a thirdconductive line. The method further includes forming a supervia openingin the first dielectric layer and the second dielectric layer, whereinthe opening in the first dielectric layer has a different sidewall anglein comparison with the opening in the second dielectric layer. Themethod further includes filling the supervia opening with a thirdconductive material to define a supervia, wherein the supervia directlyconnects to the first conductive line and the third conductive line. Insome embodiments, forming the second opening in the second dielectriclayer includes forming the second opening having a different dimensionthan the first opening. In some embodiments, the method further includesforming a third opening in the second dielectric layer, wherein thethird opening exposes a portion of the second conductive line. In someembodiments, the method further includes filling the third opening withthe second conducive material to define a via electrically connected tothe second conductive line. In some embodiments, forming the secondopening includes forming a plurality of second openings having a firstpitch, and the first conductive line is one of a plurality of firstconductive lines having a second pitch. In some embodiments, forming theplurality of second openings includes forming the plurality of secondopenings having the first pitch different from the second pitch. In someembodiments, forming the plurality of second openings includes formingthe plurality of second openings having the first pitch equal to thesecond pitch.

An aspect of this description relates to a method. The method includesdepositing a first dielectric layer over a first conductive line. Themethod further includes forming a first opening in the first dielectriclayer. The method further includes forming a second opening in the firstdielectric layer. The method further includes filling the first openingwith a first conductive material to define a second conductive line. Themethod further includes filling the second opening with a secondconductive material to define a first portion of a supervia. The methodfurther includes depositing a second dielectric layer over the firstdielectric layer. The method further includes forming a third opening inthe second dielectric layer. The method further includes forming afourth opening in the second dielectric layer, wherein a taper of thefourth opening is different from a taper of the second opening. Themethod further includes filling the third opening with a thirdconductive material to define a third conductive line. The methodfurther includes filling the fourth opening with a fourth conductivematerial to define a second portion of the supervia in direct contactwith the first portion of the supervia. In some embodiments, filling thefourth opening includes filling the fourth opening with the fourthconductive material equivalent to the second conductive material. Insome embodiments, forming the second opening includes forming the secondopening aligned with the first conducive line. In some embodiments,forming the fourth opening includes forming the fourth opening afterforming the second opening. In some embodiments, the method furtherincludes depositing a third dielectric layer over the third conductiveline; forming a fifth opening in the third dielectric layer, wherein thefifth opening extends through the second dielectric layer; and fillingthe fifth opening with a fifth conductive material to define a secondsupervia. In some embodiments, the fifth opening exposes a portion ofthe second conductive line, and filling the fifth opening includeselectrically connected the second supervia to the second conductiveline. In some embodiments, filling the fifth opening includes defining afourth conductive line, and the second supervia electrically connectsthe fourth conductive line to the second conductive line. In someembodiments, filling the fifth opening includes defining the secondsupervia having a uniform tapered profile.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: depositing a firstdielectric layer over a first conductive line; forming a first openingin the first dielectric layer; filling the first opening with a firstconductive material to define a second conductive line; depositing asecond dielectric layer over the first dielectric layer; forming asecond opening in the second dielectric layer; filling the secondopening with a second conductive material to define a third conductiveline; forming a supervia opening in the first dielectric layer and thesecond dielectric layer, wherein forming the supervia opening comprisesforming a first portion of the supervia opening simultaneously withforming the first opening; and filling the supervia opening with a thirdconductive material to define a supervia, wherein the supervia directlyconnects to the first conductive line and the third conductive line. 2.The method of claim 1, wherein forming the supervia opening comprisesforming a second portion of the supervia opening simultaneously withforming the second opening.
 3. The method of claim 2, wherein formingthe supervia opening comprises: forming the first portion having a firstsidewall at a first angle with respect to a top surface of the firstconductive line, and forming the second portion having a second sidewallat a second angle with respect to the top surface of the firstconductive line.
 4. The method of claim 1, wherein filling the superviaopening comprises filling a portion of the supervia openingsimultaneously with filling the first opening.
 5. The method of claim 1,wherein filling the supervia opening comprises filling a portion of thesupervia opening simultaneously with filling the second opening.
 6. Amethod comprising: depositing a first dielectric layer over a firstconductive line; forming a first opening in the first dielectric layer;filling the first opening with a first conductive material to define asecond conductive line; depositing a second dielectric layer over thefirst dielectric layer; forming a second opening in the seconddielectric layer; filling the second opening with a second conductivematerial to define a third conductive line; forming a supervia openingin the first dielectric layer and the second dielectric layer, whereinthe opening in the first dielectric layer has a different sidewall anglein comparison with the opening in the second dielectric layer; andfilling the supervia opening with a third conductive material to definea supervia, wherein the supervia directly connects to the firstconductive line and the third conductive line.
 7. The method of claim 6,wherein forming the second opening in the second dielectric layercomprises forming the second opening having a different dimension thanthe first opening.
 8. The method of claim 6, further comprising forminga third opening in the second dielectric layer, wherein the thirdopening exposes a portion of the second conductive line.
 9. The methodof claim 8, further comprising filling the third opening with the secondconducive material to define a via electrically connected to the secondconductive line.
 10. The method of claim 6, wherein forming the secondopening comprises forming a plurality of second openings having a firstpitch, and the first conductive line is one of a plurality of firstconductive lines having a second pitch.
 11. The method of claim 10,wherein forming the plurality of second openings comprises forming theplurality of second openings having the first pitch different from thesecond pitch.
 12. The method of claim 10, wherein forming the pluralityof second openings comprises forming the plurality of second openingshaving the first pitch equal to the second pitch.
 13. A methodcomprising: depositing a first dielectric layer over a first conductiveline; forming a first opening in the first dielectric layer; forming asecond opening in the first dielectric layer; filling the first openingwith a first conductive material to define a second conductive line;filling the second opening with a second conductive material to define afirst portion of a supervia; depositing a second dielectric layer overthe first dielectric layer; forming a third opening in the seconddielectric layer; forming a fourth opening in the second dielectriclayer, wherein a taper of the fourth opening is different from a taperof the second opening; filling the third opening with a third conductivematerial to define a third conductive line; and filling the fourthopening with a fourth conductive material to define a second portion ofthe supervia in direct contact with the first portion of the supervia.14. The method of claim 13, wherein filling the fourth opening comprisesfilling the fourth opening with the fourth conductive materialequivalent to the second conductive material.
 15. The method of claim13, wherein forming the second opening comprises forming the secondopening aligned with the first conducive line.
 16. The method of claim13, wherein forming the fourth opening comprises forming the fourthopening after forming the second opening.
 17. The method of claim 13,further comprising: depositing a third dielectric layer over the thirdconductive line; forming a fifth opening in the third dielectric layer,wherein the fifth opening extends through the second dielectric layer;and filling the fifth opening with a fifth conductive material to definea second supervia.
 18. The method of claim 17, wherein the fifth openingexposes a portion of the second conductive line, and filling the fifthopening comprises electrically connected the second supervia to thesecond conductive line.
 19. The method of claim 17, wherein filling thefifth opening comprises defining a fourth conductive line, and thesecond supervia electrically connects the fourth conductive line to thesecond conductive line.
 20. The method of claim 17, wherein filling thefifth opening comprises defining the second supervia having a uniformtapered profile.